IRF640N MOSFET N-CH 18A 200V

7.000₫

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IRF640N TO220 MOSFET N-CH 18A 200V
 

Datasheets IRF640N(S,L)PbF
   
FET Type MOSFET N-Channel, Metal Oxide
FET Feature Standard
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Rds On (Max) @ Id, Vgs 150 mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) @ Vgs 67nC @ 10V
Input Capacitance (Ciss) @ Vds 1160pF @ 25V
Power - Max 150W
Mounting Type Through Hole
Package / Case TO-220-3

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