IRF520NPBF MOSFET N-CH 9.7A 100V
6.000₫
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Mô tả :
Categories
Discrete Semiconductor Products
Transistors - FETs, MOSFETs - Single
Manufacturer
Infineon Technologies
Series
HEXFET®
Packaging
Tube
Part Status
Active
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
200mOhm @ 5.7A, 10V
Vgs(th) (Max)...
| Categories | Discrete Semiconductor Products | |
|---|---|---|
| Transistors - FETs, MOSFETs - Single | ||
| Manufacturer | Infineon Technologies | |
| Series | HEXFET® | |
| Packaging | Tube | |
| Part Status | Active | |
| FET Type | N-Channel | |
| Technology | MOSFET (Metal Oxide) | |
| Drain to Source Voltage (Vdss) | 100V | |
| Current - Continuous Drain (Id) @ 25°C | 9.7A (Tc) | |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 5.7A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V | |
| Vgs (Max) | ±20V | |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 25V | |
| FET Feature | - | |
| Power Dissipation (Max) | 48W (Tc) | |
| Operating Temperature | -55°C ~ 175°C (TJ) | |
| Mounting Type | Through Hole | |
| Supplier Device Package | TO-220AB | |
| Package / Case | TO-220-3 |
