FQP5N60C MOSFET N-CH 4.5A 600V

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MOSFET FQP5N60C N-CH 600V 4.5A TO-220

Manufacturer ON Semiconductor                                               
Series QFET®
Packaging  Tube 
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 670pF @ 25V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Rds On (Max) @ Id, Vgs 2.5 Ohm @ 2.25A, 10V
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220-3
Package / Case TO-220-3