Diode MBR0520T1G 0.5A 20V SOD123

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MBR0520T1G 0.5A 20V SMD Schottky Rectifier Diode DataSheet Features Very low forward voltage High Current Capability Absolute Maximum Ratings (Ta = 25oC) Parameter Symbol Value Unit DC Reverse Voltage Peak Reverse Voltage Working Peak Reverse Voltage VR 20 V VRRM VRWM Average Forward Current at DC, TL = 129 oC IF 0.5 A Peak One Cycle Non-repetitive Surge Current at 25 OC 5 μs sine or 3...

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MBR0520T1G 0.5A 20V SMD Schottky Rectifier Diode DataSheet

Features

Very low forward voltage
High Current Capability

Absolute Maximum Ratings (Ta = 25^oC)

Parameter		Symbol	Value	Unit
DC Reverse Voltage Peak Reverse Voltage Working Peak Reverse Voltage		V_R	20	V
		V_RRM
		V_RWM
_Average Forward Current at DC, T_L = 129 ^oC		I_F	0.5	A
Peak One Cycle Non-repetitive Surge Current	at 25 OC 5 μs sine or 3 μs rect. pulse	I_FSM⁽¹⁾	55	A
Peak One Cycle Non-repetitive Surge Current	at 25 OC 10 ms sine or 6 ms rect. pulse	I_FSM⁽¹⁾	6.5	A
Thermal Resistance Junction to Lead		R_thJL	150	OC/W
Thermal Resistance Junction to Ambient		R_thJA	340	OC/W
Junction Temperature		T_J	- 65 to + 150	^oC
Storage Temperature		T_stg	- 65 to + 150	^oC

(1) Following any rated load condition and with rated V_RRM applied.

Electrical Characteristics

Parameter	Symbol	Max	Unit
Forward Voltage at IF = 0.1 A, TJ = 25 ^oC at IF = 0.5 A, TJ = 25 ^oC at IF = 0.1 A, TJ = 100 ^oC at IF = 0.5 A, TJ = 100 ^oC	V_F	0.375 0.44 0.26 0.36	V V V V
Reverse Leakage Current at VR = 10 V, TJ = 25 ^oC at VR = 20 V, TJ = 25 ^oC at VR = 10 V, TJ = 100 ^oC at VR = 20 V, TJ = 100 ^oC	I_R	40 150 3 7	μA μA mA mA
Junction Capacitance at VR = 5 VDC (test signal range 100 KHz to 1 MHz), TJ = 25 OC	C_T	110	pF