MJD122G J122G TO252 8A/100V NPN
2.000₫
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Mô tả :
MJD122G J122G TO252 8A/100V NPN
Manufacturer
ON Semiconductor
Product Category
Darlington Transistors
Configuration
Single
Transistor Polarity
NPN
Collector- Emitter Voltage VCEO Max
100 V
Emitter- Base Voltage VEBO
5 V
Collector- Base Voltage VCBO
100 V
Maximum DC Collector Current
8 A
Maximum Collector Cut-off Current
10 uA
Pd - Power Dissipation
20 W
Continuous Collector Current
8 A
DC Collector/Base Gain hfe...
MJD122G J122G TO252 8A/100V NPN
| Manufacturer | ON Semiconductor |
| Product Category | Darlington Transistors |
| Configuration | Single |
| Transistor Polarity | NPN |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Emitter- Base Voltage VEBO | 5 V |
| Collector- Base Voltage VCBO | 100 V |
| Maximum DC Collector Current | 8 A |
| Maximum Collector Cut-off Current | 10 uA |
| Pd - Power Dissipation | 20 W |
| Continuous Collector Current | 8 A |
| DC Collector/Base Gain hfe Min | 1000 |
| Operating Temperature | -65°C to +150°C |
| Mounting Style | SMD/SMT |
| Package / Case | TO-252-3 (DPAK) |
| Dimension | 6.73 x 6.22 x 2.38 mm |
| Datasheet | MJD122 |
